SI4940DY-T1-E3
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Краткое описание:
40V 4.2A 36mR 2-CH N-CH MOSFET SOIC
Дополнительная информация
N-Channel MOSFET featuring 40V Drain-Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low 36mR Drain-Source On Resistance (Rds On Max) and fast switching times with 7ns Turn-On Delay and 12ns Fall Time. This surface mount device is housed in an 8-SOIC package, operating from -55°C to 150°C with a maximum power dissipation of 1.1W. Designed with two N-Channel FETs, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 36mR |
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