SI4942DY-T1-E3
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Краткое описание:
40V N-Ch MOSFET, 5.3A, 21mR RdsOn, SOIC
Дополнительная информация
N-channel MOSFET featuring 40V drain-source breakdown voltage and 5.3A continuous drain current. Offers low 21mΩ drain-source on-resistance at 10V Vgs, with a maximum power dissipation of 1.1W. This surface-mount component, packaged in SOIC, operates within a -55°C to 150°C temperature range and is RoHS compliant. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.2mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4nF |
| Power Dissipation | 1.1W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 40V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 21mR |
| Drain to Source Breakdown Voltage | 40V |
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