SI4944DY-T1-GE3
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Краткое описание:
30V 9.5mR N-CH MOSFET SOIC 9.3A
Дополнительная информация
Dual N-channel MOSFET featuring 30V drain-source breakdown voltage and 9.3A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 9.5mΩ drain-source on-resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. RoHS compliant with fast switching characteristics, including 10ns turn-on delay and 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Current | 75A |
| Voltage | 30V |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.3W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5mR |
| Drain to Source Breakdown Voltage | 30V |
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