SI4946BEY-T1-GE3
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Краткое описание:
60V 6.5A N-Ch MOSFET, 41mR RdsOn, SO, 2-Ch
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Voltage, 6.5A Continuous Drain Current, and 41mΩ Max Drain-Source On-Resistance. Features 2 N-Channel elements in a surface-mount SO package with 2-Element configuration. Offers 10ns turn-on delay, 10ns fall time, and 25ns turn-off delay. Operates from -55°C to 175°C, with 3.7W max power dissipation. Compliant with HALOGEN FREE and ROHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 41mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 840pF |
| Threshold Voltage | 2.4V |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 41mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 41MR |
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