SI4947ADY-T1-E3
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Краткое описание:
P-CH MOSFET -30V, 3.9A, 80mR, SOIC, P-CH
Дополнительная информация
P-channel MOSFET, 30V drain-source breakdown voltage, 3.9A continuous drain current, and 80mΩ maximum drain-source on-resistance. This surface-mount device features an 8-pin SOIC package, 150°C maximum operating temperature, and 2W power dissipation. It offers fast switching with turn-on delay time of 8ns and fall time of 10ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Nominal Vgs | -1V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Threshold Voltage | -1V |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | -30V |
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