SI4952DY-T1-E3
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Краткое описание:
N-Channel MOSFET, 25V, 7A, 23mR, SO, 2-Ch
Дополнительная информация
N-Channel MOSFET, 25V Drain-Source Voltage, 7A Continuous Drain Current, and 23mΩ Drain-to-Source Resistance. This surface-mount device features a 2-element configuration with a maximum power dissipation of 2.8W and an operating temperature range of -55°C to 150°C. Input capacitance is 680pF, with turn-on delay time of 15ns and turn-off delay time of 20ns. Packaged in an SOP-8 case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 680pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 25V |
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