SI4952DY-T1-GE3
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Краткое описание:
25V 7A 23mR 2-CH N-CH MOSFET SOIC
Дополнительная информация
Dual N-channel MOSFET, 25V Drain-Source Voltage (Vdss), 7A Continuous Drain Current (ID), and 23mΩ Max Drain-Source On-Resistance (Rds On). Features a 2.2V nominal Gate-Source Voltage (Vgs) and 15ns turn-on delay. Packaged in an 8-SOIC surface-mount case, this RoHS compliant component offers 1.8W power dissipation and operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | 2.2V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 680pF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 2.2V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 25V |
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