SI4967DY-T1-E3
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Краткое описание:
2P-CH MOSFET 12V 7.5A 23mR SOIC P-CHANNEL
Дополнительная информация
P-Channel MOSFET with 12V Drain-Source Voltage (Vdss) and 7.5A Continuous Drain Current (ID). Features low 23mR Drain-Source On Resistance (Rds On Max) and operates with an 8V Gate to Source Voltage (Vgs). This surface-mount device offers fast switching with a 25ns turn-on delay and 95ns fall time. Packaged in a compact 8-pin SOIC for tape and reel distribution, it supports a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 95ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 210ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 23mR |
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