SI4973DY-T1-E3
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Краткое описание:
P-CH MOSFET 30V 5.8A 23mR SOIC
Дополнительная информация
P-channel MOSFET with 30V drain-source breakdown voltage and 5.8A continuous drain current. Features a low 23mΩ maximum drain-source on-resistance. Surface mountable in an 8-SOIC package, this component offers fast switching with a 10ns turn-on delay and 90ns fall time. Operates across a wide temperature range from -55°C to 150°C with 1.1W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23mR |
| Drain to Source Breakdown Voltage | 30V |
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