SI5411EDU-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 25A 8.2mR 12V Surface Mount
Дополнительная информация
The SI5411EDU-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 31W and a maximum drain to source voltage of 12V. The device features a drain to source resistance of 15.5mR and a gate to source voltage of 8V. It is lead free and RoHS compliant, packaged in a tape and reel format with 3000 units per reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 12V |
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