SI5429DU-T1-GE3
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Краткое описание:
P-Channel MOSFET, -30V, 12A, 15mR, Surface Mount
Дополнительная информация
P-channel MOSFET transistor featuring a -30V drain-source breakdown voltage and 12A continuous drain current. Offers a low 15mΩ Rds On resistance at a 10V gate-source voltage. Designed for surface mount applications with a compact 3.08mm x 1.98mm x 0.85mm footprint. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 31W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.98mm |
| Height | 0.85mm |
| Length | 3.08mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Package Quantity | 3000 |
| Input Capacitance | 2.32nF |
| Power Dissipation | 31W |
| Threshold Voltage | -1V |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain to Source Breakdown Voltage | -30V |
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