SI5435BDC-T1-E3
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Краткое описание:
P-CH MOSFET 30V 4.3A 45mR SMD
Дополнительная информация
P-channel MOSFET, 30V drain-source breakdown voltage, 4.3A continuous drain current, and 45mΩ maximum drain-source on-resistance. Features a 12ns fall time and 8ns turn-on delay time. Operates within a -55°C to 150°C temperature range with 1.3W maximum power dissipation. Packaged in a 1206-8 SMD/SMT case, suitable for surface mounting and supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.043inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Nominal Vgs | -1V |
| Package/Case | SMD/SMT |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.3W |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 30V |
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