SI5442DU-T1-GE3

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SI5442DU-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL TrenchFET MOSFET 25A 20V 10mR 31W Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SI5442DU-T1-GE3 is a N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 25A and a drain to source voltage of 20V. The device is lead free and RoHS compliant, packaged in a tape and reel format with 3000 units per package. It is suitable for surface mount applications.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 10mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.7nF
Radiation Hardening No
Turn-Off Delay Time 35ns
Max Power Dissipation 31W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 10mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 25A
Drain to Source Voltage (Vdss) 20V

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