SI5447DC-T1-GE3
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Краткое описание:
P-CH MOSFET 20V 3.5A 76mR SMD
Дополнительная информация
P-channel MOSFET, 20V drain-source voltage, 3.5A continuous drain current, and 76mΩ drain-source resistance at 4.5V gate-source voltage. Features a 2.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. This surface-mount device offers fast switching with turn-on delay of 14ns and fall time of 17ns. Packaged in tape and reel, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | P-CHANNEL |
| Fall Time | 17ns |
| Packaging | Tape and Reel |
| Rds On Max | 76mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 44ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 76mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 20V |
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