SI5504BDC-T1-GE3
Снят с производства
Увеличить
Краткое описание:
2-Ch N/P-Ch MOSFET, 30V, 3.7A, 65mΩ, SMD
Дополнительная информация
Dual-channel N-channel and P-channel power MOSFET for surface-mount applications. Features a 30V drain-source voltage and a maximum continuous drain current of 3.7A. Offers a low drain-source on-resistance of 65mΩ at a nominal gate-source voltage of 1.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a leadless 1206-8 SMD/SMT format, supplied on tape and reel. RoHS and Halogen-free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | 1.5V |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 220pF |
| Power Dissipation | 1.5W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 112mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 140mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
