SI5515CDC-T1-E3
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Краткое описание:
N/P-Channel MOSFET, 20V, 4A, 36mΩ, SMD
Дополнительная информация
Dual N-Channel and P-Channel MOSFET for surface mount applications. Features 20V drain-source voltage, 4A continuous drain current, and low 36mΩ drain-source resistance. Operates with an 8V gate-source voltage and offers fast switching speeds with a 10ns turn-on delay and 6ns fall time. This RoHS compliant component is housed in a compact 1206-8 package, ideal for space-constrained designs.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 6ns |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Nominal Vgs | 800mV |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 632pF |
| Threshold Voltage | 800mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 83mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
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