SI5933CDC-T1-E3

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SI5933CDC-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 2.5A 144mR SMD
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET for surface mount applications, featuring 20V drain-source voltage and 2.5A continuous drain current. Offers a low 144mΩ drain-source resistance at 4.5V gate-source voltage, with a maximum power dissipation of 2.8W. Designed with fast switching characteristics, including 1ns turn-on delay and 22ns turn-off delay, and an input capacitance of 276pF. Operates across a wide temperature range from -55°C to 150°C, packaged in tape and reel for efficient assembly.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1.1mm
Length 3.05mm
Series TrenchFET®
Weight 0.002998oz
Polarity P-CHANNEL
Fall Time 34ns
Packaging Tape and Reel
Rds On Max 144mR
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 276pF
Number of Channels 2
Turn-On Delay Time 1ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 144mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 20V

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