SI5935DC-T1-E3
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Краткое описание:
2P-CH MOSFET -20V, 3A, 86mR, SMD
Дополнительная информация
P-Channel MOSFET, 20V Vdss, 3A continuous drain current, and 86mR Rds On. This surface mount device features a 1206-8 package with dimensions of 3.05mm length, 1.65mm width, and 1.1mm height. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 1.1W. Includes fast switching characteristics with turn-on delay of 18ns and fall time of 32ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1.1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.002998oz |
| Polarity | P-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 86mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 86mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | -20V |
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