SI5999EDU-T1-GE3
Производится
Увеличить
Краткое описание:
Dual P-CHANNEL MOSFET, 20V, 6A, 10.4W, Surface Mount
Дополнительная информация
The SI5999EDU-T1-GE3 is a dual P-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 10.4W and a continuous drain current of -6A. The device features a drain to source resistance of 47mR and a drain-source on resistance-max of 59mR. It is lead free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 59mR |
| Nominal Vgs | -600mV |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 496pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 17ns |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 10.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 47mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | -6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 59mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
