SI6413DQ-T1-E3

Снят с производства
SI6413DQ-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 7.2A 10mR TSSOP
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 7.2A continuous drain current. Features low 10mΩ drain-source on-resistance and 8V gate-source voltage. Operates from -55°C to 150°C with 1.05W maximum power dissipation. Packaged in an 8-pin TSSOP for surface mounting, this component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4.4mm
Height 1mm
Length 3mm
Series TrenchFET®
Weight 0.005573oz
Polarity P-CHANNEL
Fall Time 120ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 10mR
Package/Case TSSOP
Package Quantity 3000
Number of Channels 1
Turn-On Delay Time 55ns
Turn-Off Delay Time 305ns
Max Power Dissipation 1.05W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 10mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 7.2A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 10mR

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