SI6466ADQ-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 8.1A 14mR TSSOP
Дополнительная информация
N-channel MOSFET featuring a 20V drain-source breakdown voltage and 8.1A continuous drain current. Surface mountable in an 8-pin TSSOP package, this component offers a low 14mΩ drain-source on-resistance. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 1.05W and is RoHS compliant. Fast switching characteristics are evident with turn-on delay time of 27ns and fall time of 34ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 34ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Nominal Vgs | -450mV |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.05W |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 76ns |
| Max Power Dissipation | 1.05W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 14MR |
| Drain to Source Breakdown Voltage | 20V |
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