SI6467BDQ-T1-E3
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Краткое описание:
P-CH MOSFET 12V 6.8A 12.5mR TSSOP
Дополнительная информация
P-channel MOSFET with 12V drain-source breakdown voltage and 6.8A continuous drain current. Features low 12.5mΩ drain-source on-resistance and 1.05W maximum power dissipation. Operates from -55°C to 150°C, packaged in TSSOP for surface mounting. Includes fast switching times with 45ns turn-on delay and 85ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 85ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12.5mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.05W |
| Threshold Voltage | 450mV |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 220ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.05W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 12.5mR |
| Drain to Source Breakdown Voltage | 12V |
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