SI6544BDQ-T1-E3
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Краткое описание:
N/P-CH MOSFET 30V 4.3A 32mR TSSOP
Дополнительная информация
N/P-Channel MOSFET, 30V Drain to Source Voltage, 4.3A Continuous Drain Current. Features 32mΩ Max Drain-Source On-Resistance and 14ns Turn-On Delay Time. Packaged in an 8-TSSOP for surface mounting, this component offers a 150°C max operating temperature and 830mW power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.122inch |
| Height | 0.041inch |
| Length | 0.177inch |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 43mR |
| Nominal Vgs | 1V |
| Package/Case | TSSOP |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 830mW |
| Number of Elements | 2 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32mR |
| Drain to Source Breakdown Voltage | 30V |
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