SI6924AEDQ-T1-E3
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Краткое описание:
2 N-CH MOSFET 28V 4.1A 33mR TSSOP
Дополнительная информация
Surface mount N-channel dual MOSFET with 28V drain-source breakdown voltage and 4.1A continuous drain current. Features 33mΩ maximum drain-source on-resistance and 1W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-TSSOP for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SI6924AEDQ |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 1400ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Turn-On Delay Time | 950ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7000ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 14V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | 28V |
| Drain-source On Resistance-Max | 33MR |
| Drain to Source Breakdown Voltage | 28V |
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