SI6925ADQ-T1-E3
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Краткое описание:
20V 3.3A N-CH MOSFET, 45mR Rds On, TSSOP
Дополнительная информация
Surface mount N-channel MOSFET with 20V drain-source breakdown voltage and 3.3A continuous drain current. Features 45mΩ maximum drain-source on-resistance and 1.13W power dissipation. Operates from -55°C to 150°C, with 40ns turn-on delay and 20ns turn-off delay. Packaged in an 8-TSSOP for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SI6925ADQ |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.13W |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 20V |
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