SI6943BDQ-T1-E3
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Краткое описание:
P-CH MOSFET 12V 2.3A 80mR TSSOP
Дополнительная информация
P-channel MOSFET, 12V Drain-Source Voltage (Vdss), 2.3A Continuous Drain Current (ID). Features 80mΩ Max Drain-Source On Resistance (Rds On) at a nominal Vgs of -450mV. Operates within a temperature range of -55°C to 150°C, with 800mW power dissipation. Packaged in an 8-TSSOP surface-mount configuration, utilizing Tape and Reel packaging. Turn-on delay time is 15ns, and fall time is 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.122inch |
| Height | 0.041inch |
| Length | 0.177inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Nominal Vgs | -450mV |
| Package/Case | TSSOP |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 800mW |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | -12V |
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