SI6954ADQ-T1-E3
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Краткое описание:
30V 3.1A N-Channel MOSFET, 53mR Rds On, TSSOP
Дополнительная информация
Surface mount N-channel MOSFET featuring 30V drain-source voltage and 3.1A continuous drain current. This component offers a maximum on-resistance of 53mR at a nominal gate-source voltage of 1V. Designed with two N-channel FETs in a TSSOP package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 830mW. Key switching characteristics include a 12ns turn-on delay and a 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Nominal Vgs | 1V |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 53mR |
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