SI6966EDG-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 5.2A 8-Pin TSSOP SMT
Дополнительная информация
N-channel enhancement mode power MOSFET, 20V drain-source voltage, 5.2A continuous drain current. Features 30mOhm maximum drain-source resistance at 4.5V Vgs and 15nC typical gate charge. Packaged in an 8-pin TSSOP (Thin Shrink Small Outline Package) with gull-wing leads for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 1250mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-153AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSSOP |
| AEC Qualified | No |
| Configuration | Dual Dual Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.4 |
| Package Description | Thin Shrink Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 1 |
| Package Length (mm) | 3 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.2(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Maximum Continuous Drain Current | 5.2A |
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