SI6966EDQ-T1-E3
Снят с производства
Увеличить
Краткое описание:
2 N-CH MOSFET 20V 5.2A 30mR TSSOP
Дополнительная информация
Dual N-Channel MOSFET, 20V Drain-Source Voltage, 5.2A Continuous Drain Current, and 30mΩ Max Drain-Source On-Resistance. This surface-mount component features a TSSOP package with a maximum power dissipation of 1.25W and operates across a temperature range of -55°C to 150°C. It includes a 12V Gate-to-Source Voltage rating, with turn-on delay time of 100ns and fall time of 130ns.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | SI6 |
| Weight | 0.005573oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 130ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Package/Case | TSSOP |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 100ns |
| Turn-Off Delay Time | 420ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
