SI6983DQ-T1-E3
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Краткое описание:
2P-CH MOSFET 20V 4.6A 24mR TSSOP
Дополнительная информация
P-channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features 24mΩ maximum drain-source on-resistance at 8V gate-source voltage. Operates across a -55°C to 150°C temperature range with 830mW maximum power dissipation. Surface-mount TSSOP package with 2 channels, ideal for general semiconductor applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.4mm |
| Height | 1mm |
| Length | 3mm |
| Series | TrenchFET® |
| Weight | 0.005573oz |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 2 |
| Turn-On Delay Time | 40ns |
| Turn-Off Delay Time | 135ns |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 24mR |
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