SI6983DQ-T1-GE3

Снят с производства
SI6983DQ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: 2P-CH MOSFET 20V 4.6A 24mR TSSOP
Производитель Vishay(Siliconix)
Категория Транзисторы
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features 24mΩ maximum drain-source on-resistance and 8V gate-source voltage. This general-purpose transistor offers fast switching with 40ns turn-on and 135ns turn-off delay times, and a 52ns fall time. Packaged in an 8-pin TSSOP for surface mounting, it operates across a -55°C to 150°C temperature range.
RoHS Not Compliant
Mount Surface Mount
Width 4.4mm
Height 1mm
Length 3mm
Series TrenchFET®
Weight 0.005573oz
Polarity P-CHANNEL
Fall Time 52ns
Packaging Tape and Reel
Rds On Max 24mR
Resistance 0.024R
Package/Case TSSOP
RoHS Compliant No
Package Quantity 3000
Number of Channels 2
Turn-On Delay Time 40ns
Turn-Off Delay Time 135ns
Max Power Dissipation 830mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.6A
Drain to Source Voltage (Vdss) 20V

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