SI6993DQ-T1-E3
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Краткое описание:
P-CH MOSFET, 30V, 3.6A, 31mR, TSSOP, Surface Mount
Дополнительная информация
P-channel MOSFET with 30V drain-source breakdown voltage and 3.6A continuous drain current. Features 31mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -1V. This surface-mount component offers fast switching with turn-on delay of 13ns and fall time of 14ns. Maximum power dissipation is 830mW, operating across a temperature range of -55°C to 150°C. Packaged in TSSOP for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.122inch |
| Height | 0.041inch |
| Length | 0.177inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 31mR |
| Nominal Vgs | -1V |
| Package/Case | TSSOP |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 830mW |
| Threshold Voltage | -1V |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 52ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 830mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 31mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 31mR |
| Drain to Source Breakdown Voltage | 30V |
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