SI7110DN-T1-E3
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Краткое описание:
N-CH MOSFET 20V 13.5A 5.3mR TrenchFET® PowerPAK
Дополнительная информация
N-channel MOSFET featuring 20V drain-source voltage and 13.5A continuous drain current. Offers low 4.9mR maximum drain-source on-resistance. Designed for surface mounting in a compact 8-pin PowerPAK 1212 package. Operates across a -55°C to 150°C temperature range with 1.5W maximum power dissipation. Includes fast switching characteristics with 10ns fall time and 12ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 4.9mR |
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