SI7110DN-T1-GE3
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Краткое описание:
20V 13.5A N-CH MOSFET, 5.3mR Rds On, 8-Pin PowerPAK
Дополнительная информация
N-channel MOSFET with 20V drain-source voltage and 13.5A continuous drain current. Features low 5.3mΩ drain-source resistance and fast switching times, including 12ns turn-on delay and 10ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Voltage (Vdss) | 20V |
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