SI7114ADN-T1-GE3
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Краткое описание:
N-Channel MOSFET, 30V, 35A, 7.5mR Rds(on), Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring a 30V drain-to-source voltage and 35A continuous drain current. Offers low on-resistance with a maximum of 7.5mΩ at a 10V gate-to-source voltage. Designed for surface mounting in an 8-pin PowerPAK 1212 package, this component boasts fast switching speeds with turn-on and turn-off delay times of 20ns and a fall time of 10ns. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 3.7W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.23nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 30V |
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