SI7148DP-T1-E3

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SI7148DP-T1-E3 - Vishay(Siliconix)
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Краткое описание: 75V 28A N-CH MOSFET, 11mR Rds On, PowerPAK SO
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET transistor, 75V drain-source voltage, 28A continuous drain current, and 11mΩ maximum drain-source on-resistance. Features a 2V gate-source threshold voltage and 100ns fall time. Surface mountable in an 8-pin PowerPAK SO package, this component operates from -55°C to 150°C with a maximum power dissipation of 5.4W. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 5.89mm
Height 1.04mm
Length 4.9mm
Series TrenchFET®
Weight 0.01787oz
Polarity N-CHANNEL
Fall Time 100ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 11mR
Nominal Vgs 2V
Termination SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 2.9nF
Threshold Voltage 2V
Number of Channels 1
Turn-On Delay Time 33ns
Dual Supply Voltage 75V
Radiation Hardening No
Turn-Off Delay Time 39ns
Reach SVHC Compliant Unknown
Max Power Dissipation 5.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 11mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 28A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 11mR

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