SI7190DP-T1-GE3
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Краткое описание:
N-CH MOSFET 250V 18.4A 118mR SOIC
Дополнительная информация
N-channel MOSFET, 250V Drain-Source Voltage, 18.4A Continuous Drain Current, and 118mR maximum Drain-Source On Resistance. Features a 2V threshold voltage, 9ns fall time, 13ns turn-on delay, and 28ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 96W. Surface mountable in a 5.89mm x 4.9mm x 1.04mm SOIC package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 118mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.214nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 96W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 118mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.4A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 118MR |
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