SI7192DP-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 60A 1.9mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring 30V drain-source voltage and 60A continuous drain current. Offers a low 1.85mR drain-source on-resistance and 1.9mR Rds On Max. Designed for surface mounting in an 8-pin SOIC package, this component boasts a maximum power dissipation of 104W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 41ns turn-on delay and 32ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SI7 |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.9mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.8nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 41ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 86ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.85mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.9mR |
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