SI7212DN-T1-GE3
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Краткое описание:
2 N-Channel MOSFETs, 4.9A ID, 30V Vdss, 36mR Rds On, 1.3W PD
Дополнительная информация
The SI7212DN-T1-GE3 is a dual N-channel MOSFET from Vishay, featuring a maximum continuous drain current of 4.9A and a drain to source voltage of 30V. It has a maximum drain to source resistance of 36mR and a maximum power dissipation of 1.3W. The device is designed for surface mount applications and has an operating temperature range of -55°C to 150°C. It is RoHS compliant and available in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.3W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
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