SI7222DN-T1-E3
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Краткое описание:
40V 6A N-CH MOSFET Dual, 42mR RdsOn, SMT
Дополнительная информация
Dual N-Channel MOSFET, 40V Drain-Source Breakdown Voltage, 6A Continuous Drain Current, and 42mΩ Max Drain-Source On Resistance. Features include 7ns fall time, 9ns turn-on delay, and 21ns turn-off delay. This surface-mount component operates from -55°C to 150°C with a max power dissipation of 17.8W. Packaged in a 1212-8 module, it offers 700pF input capacitance and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.15mm |
| Height | 1.07mm |
| Length | 3.15mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Package/Case | Module |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 700pF |
| Power Dissipation | 2.5W |
| Number of Elements | 2 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 17.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 42mR |
| Drain to Source Breakdown Voltage | 40V |
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