SI7224DN-T1-GE3

Снят с производства
SI7224DN-T1-GE3 - Vishay(Siliconix)
Увеличить
Краткое описание: 2 N-Ch MOSFET 30V 6A 22mR SOT23-6 Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel MOSFET featuring 30V drain-source voltage and 6A continuous drain current. Offers low 22mΩ drain-source resistance and 23W maximum power dissipation. This surface-mount component operates across a -55°C to 150°C temperature range and includes fast switching characteristics with turn-on delay of 20ns and fall time of 10ns. Packaged in an 8-pin PowerPAK 1212, it is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.3mm
Height 1.04mm
Length 3.3mm
Series TrenchFET®
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 35mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 570pF
Number of Channels 2
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Max Power Dissipation 23W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 22mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.