SI7228DN-T1-GE3
Снят с производства
Увеличить
Краткое описание:
30V 8.8A N-CH MOSFET 2-Ch Surface Mount
Дополнительная информация
N-channel MOSFET featuring 30V drain-source voltage and 8.8A continuous drain current. Offers 20mΩ drain-to-source resistance and 23W maximum power dissipation. This dual-channel transistor operates within a -55°C to 150°C temperature range and is housed in an 8-pin PowerPAK 1212 surface-mount package. Ideal for applications requiring efficient switching with fast turn-on (5ns) and turn-off (15ns) times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 480pF |
| Power Dissipation | 2.6W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 23W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
