SI7270DP-T1-GE3
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Краткое описание:
Dual N-Channel MOSFET, 30V, 8A, 17.5mR, SOIC
Дополнительная информация
Dual N-Channel MOSFET featuring 30V drain-source voltage and 8A continuous drain current. Offers low 17.5mΩ drain-to-source resistance at 10V gate-source voltage. Includes 900pF input capacitance and 1.2V threshold voltage. Designed for surface mounting in a SOIC package, operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 900pF |
| Power Dissipation | 3.6W |
| Threshold Voltage | 1.2V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 17.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
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