SI7328DN-T1-GE3
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Краткое описание:
30V 35A N-CH MOSFET, 6.6mR Rds On, Surface Mount
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 35A continuous drain current. Features low 6.6mΩ drain-source on-resistance and 1.5V threshold voltage. Operates from -50°C to 150°C with a maximum power dissipation of 3.78W. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. RoHS compliant with fast switching times including 8ns fall time and 10ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 1.04mm |
| Length | 3.3mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.61nF |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 6.6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.6mR |
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