SI7336ADP-T1-E3
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Краткое описание:
N-Channel MOSFET, 30V, 30A, 3mR RdsOn, PowerPAK
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source voltage and 30A continuous drain current. Achieves a low 3mΩ drain-source on-resistance at a nominal gate-source voltage of 1V. This surface-mount device offers fast switching with turn-on delay of 24ns and fall time of 32ns, supporting a maximum power dissipation of 5.4W. Packaged in a leadless PowerPAK SOP-8, it operates across a wide temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5.6nF |
| Power Dissipation | 5.4W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3mR |
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