SI7370DP-T1-E3
Производится
Увеличить
Краткое описание:
MOSFET N-CH 60V 9.6A 11mR SOIC 8-Pin
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 9.6A continuous drain current. Offers low 11mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Surface mountable in an 8-pin SOIC package, this component operates from -55°C to 150°C with a maximum power dissipation of 1.9W. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Nominal Vgs | 4V |
| Package/Case | SOIC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.9W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 11MR |
| Drain to Source Breakdown Voltage | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
