SI7404DN-T1-E3

Снят с производства
SI7404DN-T1-E3 - Vishay(Siliconix)
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Краткое описание: 30V 8.5A N-CH MOSFET 13mR 8-Pin PowerPAK SMT
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET featuring 30V drain-source breakdown voltage and 8.5A continuous drain current. Offers a low 13mΩ maximum drain-source on-resistance. Designed for surface mount applications with a compact 0.124 x 0.124 x 0.042 inch PowerPAK 1212 package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes fast switching characteristics with turn-on delay of 27ns and turn-off delay of 64ns.
RoHS Compliant
Mount Surface Mount
Width 0.124inch
Height 0.042inch
Length 0.124inch
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 39ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 13mR
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 1.5W
Turn-On Delay Time 27ns
Turn-Off Delay Time 64ns
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 13mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 8.5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 13mR
Drain to Source Breakdown Voltage 30V

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