SI7405BDN-T1-E3

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SI7405BDN-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 12V 13.5A 13mR PPAK 1212-8
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET, 12V Vdss, 13.5A continuous drain current, and 13mΩ maximum drain-source on-resistance. Features a 3.05mm x 3.05mm x 1.04mm PPAK 1212-8 surface mount package. Offers fast switching with 22ns turn-on delay and 45ns fall time, operating from -55°C to 150°C. This RoHS compliant component supports a maximum power dissipation of 33W.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 45ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 13mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 3.5nF
Number of Channels 1
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 80ns
Max Power Dissipation 33W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 13mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 13.5A
Drain to Source Voltage (Vdss) 12V
Drain-source On Resistance-Max 13mR

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