SI7414DN-T1-GE3
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Краткое описание:
N-CH MOSFET 60V 5.6A 25mR 8-Pin PowerPAK 1212
Дополнительная информация
N-channel MOSFET with 60V drain-source voltage and 5.6A continuous drain current. Features low 25mR drain-source on-resistance and 1.5W max power dissipation. Operates from -55°C to 150°C, with a 3V threshold voltage and 20V gate-source voltage. Packaged in an 8-pin PowerPAK 1212 for surface mounting, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | 1212 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 25MR |
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