SI7415DN-T1
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Краткое описание:
P-CH MOSFET, -60V, 3.6A, 65mR, 1.5W, SMT
Дополнительная информация
P-channel MOSFET featuring a -60V drain-source breakdown voltage and 3.6A continuous drain current. This surface-mount component offers a low 65mΩ drain-to-source resistance and a maximum power dissipation of 1.5W. Operating across a wide temperature range from -55°C to 150°C, it exhibits fast switching characteristics with a 12ns fall time and 12ns turn-on delay. The device supports a gate-to-source voltage of up to 20V and is packaged in tape and reel.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | SI7 |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Polarization | P |
| RoHS Compliant | No |
| DC Rated Voltage | -60V |
| Package Quantity | 3000 |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain to Source Breakdown Voltage | -60V |
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